15N120 1200V NPT Trench IGBT Transistor

High Voltage IGBT with low saturation voltage Collector-Emitter Voltage (VCE): 1200V Collector Current (IC): 30A @25°C Minimum Gate threshold voltage (VGE) is 4.5V Maximum Gate threshold voltage (VGE) is 8.5V The 15N120 is a high voltage IGBT with a Collector to Emitter voltage of 1200V and continuous collector current of 30A. It also has a very low collector emitter saturation voltage of 1.9V and low switching losses. FEATURES:  ·High speed switching ·High system efficiency ·Soft current turn-off waveforms ·Extremely enhanced avalanche capability